Optimization of process parameter variations on leakage current in SOI vertical double gate MOSFET device

K.E. Kaharudin; F. Salehuddin; A.S.M. Zain; M.N.I. Abd Aziz

doi:10.15282/jmes.10.1.2016.13.0181

Authors

K.E. Kaharudin Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka (UTeM), Hang Tuah Jaya, Durian Tunggal, 76100 Melaka
F. Salehuddin Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka (UTeM), Hang Tuah Jaya, Durian Tunggal, 76100 Melaka
A.S.M. Zain Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka (UTeM), Hang Tuah Jaya, Durian Tunggal, 76100 Melaka
M.N.I. Abd Aziz Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka (UTeM), Hang Tuah Jaya, Durian Tunggal, 76100 Melaka

DOI:

https://doi.org/10.15282/jmes.10.1.2016.13.0181

Keywords:

Analysis of variance; DG-MOSFET; SNR; SOI

Abstract

This paper presents a study of optimizing input process parameters on leakage current (IOFF) in a silicon-on-insulator (SOI) Vertical Double-Gate (DG) Metal Oxide Field-Effect-Transistor (MOSFET) by using the L36 Taguchi method. The performance of the SOI Vertical DG-MOSFET device is evaluated in terms of its lowest leakage current (IOFF) value. An orthogonal array (OA), main effects, signal-to-noise ratio (SNR) and analysis of variance (ANOVA) are utilized in order to analyse the effect of input process parameter variation on the leakage current (IOFF). Based on the results, the minimum leakage current ((IOFF) of the SOI Vertical DG-MOSFET is observed to be 0.009 nA/μm or 9 ρA/μm while keeping the drive current (ION) value at 434 μA/μm. Both the drive current (ION) and leakage current (IOFF) values yield a higher ION/IOFF ratio (48.22 x 106) for low power consumption application. Meanwhile, the polysilicon doping tilt angle and polysilicon doping energy are recognized as the most dominant factors, contributing factor effects percentages of 59% and 25% respectively.

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