Deformation mechanics of sputtered copper layers during nanoindentation tests
DOI:
https://doi.org/10.15282/jmes.14.1.2020.25.0510Keywords:
Hardening curve, hardness, nanoindentation test, sputtered copper coating, Young’s modulusAbstract
The mechanical properties of the thin sputtered copper layer on the SiO2-coated silicon substrate is needed as part of the requirements in quantifying the reliability of the Through-Silicon Via (TSV) interconnects. In this respect, two different Cu coating layers, each from the different sputtering process, are examined. A series of nanoindentation tests are performed on the Cu coating layer samples with indenter speeds ranging from 80 to 400 nm/s, and the indentation depths of 320 nm. The properties of elastic modulus, hardness and the hardening behavior of the Cu coating layers have been quantified. Results show that the coating with higher contamination of C at 8.41 wt. % displays a significant hardening and a peak load level, as reflected in the measured nanoindentation load-displacement curves. However, insignificant effect of the applied probe displacement speeds up to 400 nm/s on the resulting properties of the coating is registered. The Johnson-Cook constitutive equation adequately describes the strain rate-dependent hardening behavior of the Cu coating layer.
References
Chen S, Qin F, Zhao J, An T. TSV-Cu protrusion induced by thermal cycling test. In: 17th International Conference on Electronic Packaging Technology (ICEPT); 16-19 August 2016.
Ma HC, Guo JD, Chen JQ, Zhu QS, Shang JK. The reliability of through silicon via under thermal cycling. In: 16th International Conference on Electronic Packaging Technology (ICEPT); 11-14 August, 2015.
Jung M, Mitra J, Pan DZ, Lim SK. TSV stress-aware full-chip mechanical reliability analysis and optimization for 3D IC. Communicaton ACM. 2014;57(1):107-15.
Jung M, Pan DZ, Lim SK. Chip/package mechanical stress impact on 3-D IC reliability and mobility variations. IEEE Transactions Computer-Aided Design of Integrated Circuits Systems. 2013;32(11):1694-707
Demir K, Armutlulu A, Sundaram V, Raj PM, Tummala RR. Reliability of copper through-package vias in bare glass interposers. IEEE Transactions on Components, Packaging and Manufacturing Technology. 2017;7(6):829-37.
Jung DH, Kim Y, Kim JJ, Kim H, Choi S, Song YH et al. Through-silicon via (TSV) defect modeling, measurement, and analysis. IEEE Transactions on Components, Packaging and Manufacturing Technology. 2017;7(1):138-52.
Sumigawa T, Shishido T, Murakami T, Iwasaki T, Kitamura T. Evaluation on plastic deformation property of copper nano-film by nano-scale cantilever specimen. Thin Solid Films. 2010;518(21):6040-7.
ASTM E2546-15. Standard practice for instrumented indentation testing. ASTM International, West Conshohocken, PA. 2015.
Fischer CAC. Nanoindentation. Mechanical Engineering Series: Springer; 2011.
Beegan D, Chowdhury S, Laugier MT. A nanoindentation study of copper films on oxidised silicon substrates. Surface and Coatings Technology. 2003;176(1):124-30.
Fang TH, Chang WJ. Nanomechanical properties of copper thin films on different substrates using the nanoindentation technique. Microelectronic Engineering. 2003;65(1–2):231-8.
Amiri S, Xi C, Manes A, Giglio M, editors. An analysis of copper film mechanical properties by means of nanoindentation technique. Nanotechnology Materials and Devices Conference (NMDC). IEEE 9th, 12-15 October 2014.
Fong W, Koay K, Azid I. Experimental evaluation on the silicon mechanical performance of electronic packaging. Journal of Mechanical Engineering And Sciences. 2017;11(1):2456-68.
Jindal P, Jyoti J, Kumar N. Mechanical characterisation of ABS/MWCNT composites under static and dynamic loading conditions. Journal of Mechanical Engineering and Sciences. 2016;10(3):2288-99.
Koloor SSR, Karimzadeh A, Tamin MN, Hamdi ASM. Effects of sample and indenter configurations of nanoindentation experiment on the mechanical behavior and properties of ductile materials. Metals. 2018;8(6):421.
Giannakopoulos AE, Suresh S. Determination of elastoplastic properties by instrumented sharp indentation. Scripta Materialia. 1999;40(10):1191-8.
Suresh S, Giannakopoulos AE. A new method for estimating residual stresses by instrumented sharp indentation. Acta Materialia. 1998;46(16):5755-67.
Bucaille JL, Stauss S, Felder E, Michler J. Determination of plastic properties of metals by instrumented indentation using different sharp indenters. Acta Materialia. 2003;51(6):1663-78.
Afripin MAA, Yoon CK, Tamin MN. An inverse approach for strain rate-dependent constitutive responses of copper layers. South East Asia, SIMULIA Regional Users Conference. Singapore 2016.
Ayatollahi MR, Karimzadeh A. Determination of fracture toughness of bone cement by nano-indentation test. International Journal of Fracture. 2012.
Bergshoeff. Microstructure analysis of PVD deposited thin copper films. 2011.
Boo JH, Jung MJ, Park HK, Nam KH, Han JG. High-rate deposition of copper thin films using newly designed high-power magnetron sputtering source. Surface and Coatings Technology. 2004;188-189:721-7.
Afripin MAA, Fadil NA, Hamid MFA, Yoon CK, Cheah BE, Razak BBA et al. Rate-dependent responses of electroless plated and sputtered copper layer during nanoindentation loading. 2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference; 2016 20-22 Sept. 2016.
Oliver WC, Pharr GM. Measurement of hardness and elastic modulus by instrumented indentation: Advances in understanding and refinements to methodology. Journal of materials research. 2004;19(01):3-20.
Oliver WC, Pharr GM. An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. Journal of Materials Research. 1992;7(06):1564-83.
Hay JL, GM P. ASM handbook mechanical testing and evaluation. Kuhn H MD, editor: ASM International. 2000:232–43.
Wu W, Qin F, An T, Chen P. Experimental and numerical investigation of mechanical properties of electroplating copper filled in through silicon vias. IEEE Transactions on Components, Packaging and Manufacturing Technology. 2016;6(1):23-30.
Okoro C, Levine LE, Ruqing X, Obeng YS, editors. Experimentally, how does Cu TSV diameter influence its stress state? Electronic Components and Technology Conference (ECTC), IEEE 65th, 26-29 May 2015.
Johnson GR, Cook WH, editors. A constitutive model and data for metals subjected to large strains, high strain rates and high Temperatures. Proceedings of the 7th International Symposium on Ballistics; 1983.
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