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  • Optimization of process parameter variations on leakage current in SOI vertical double gate MOSFET device

    K.E. Kaharudin, F. Salehuddin, A.S.M. Zain, M.N.I. Abd Aziz
    1895-1907
    2016-06-30
  • Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device

    K.E. Kaharudin, F. Salehuddin, A.S.M. Zain, M.N.I. Abd Aziz
    1614-1627
    2015-12-31
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JMES | ISSN: 2289-4659 (Print); 2231-8380 (Online)
Faculty of Mechanical and Automotive Engineering Technology
Universiti Malaysia Pahang Al-Sultan Abdullah
26600 Pekan, Pahang, MALAYSIA

© Universiti Malaysia Pahang Al-Sultan Abdullah Publishing

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