KAHARUDIN, K.E.; SALEHUDDIN, F.; ZAIN, A.S.M.; ABD AZIZ, M.N.I. Optimization of process parameter variations on leakage current in SOI vertical double gate MOSFET device. Journal of Mechanical Engineering and Sciences, Kuantan, Malaysia, v. 10, n. 1, p. 1895–1907, 2016. DOI: 10.15282/jmes.10.1.2016.13.0181. Disponível em: https://journal.ump.edu.my/jmes/article/view/7822. Acesso em: 21 may. 2025.