KAHARUDIN, K.E.; SALEHUDDIN, F.; ZAIN, A.S.M.; ABD AZIZ, M.N.I. Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device. Journal of Mechanical Engineering and Sciences, Kuantan, Malaysia, v. 9, p. 1614–1627, 2015. DOI: 10.15282/jmes.9.2015.9.0157. Disponível em: https://journal.ump.edu.my/jmes/article/view/8373. Acesso em: 3 jun. 2025.