[1]
Kaharudin, K. , Salehuddin, F. , Zain, A. and Abd Aziz, M. 2015. Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device. Journal of Mechanical Engineering and Sciences. 9, (Dec. 2015), 1614–1627. DOI:https://doi.org/10.15282/jmes.9.2015.9.0157.